Analysis of radiation damaged HPGe detectors with a new algorithm
Creators
- 1. Max-Planck-Inst. fuer Chemie, Mainz (Germany)
Description
After being irradiated by high-energy protons, the energy resolution of HPGe detectors degrade extensively. Resulting line shapes depend mostly on detector geometry and doping type. To improve the analysis of measured gamma-ray spectra of HPGe detectors, new algorithms were developed. Since trapping in radiation damaged HPGe detectors is predominantly hole trapping, the full energy peak is the integration of absorption events produced within the detector at various distances from the positive contact. Implementing that information into fit algorithms, peaks produced by detectors irradiated with 6·108 protons/cm2 could be analyzed. The tailing structure at the low energy side was included in the algorithm. Analog algorithms were successfully applied to damaged coaxial detectors of either doping type. Using these algorithms, it was possible to evaluate transients in damaged detectors after having been exposed to room temperature. Also, the development of tail broadening could be examined
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 43
- Journal Issue
- 3Pt2
- Journal Page Range
- p. 1570-1575.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- IEEE nuclear science symposium and medical imaging conference.
- Dates
- 23-28 Oct 1995.
- Place
- San Francisco, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27075900
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMBIENT TEMPERATURE; ANNEALING; CRYSTAL DEFECTS; DOPED MATERIALS; GAMMA SPECTROSCOPY; HIGH-PURITY GE DETECTORS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- CRYSTAL STRUCTURE; GE SEMICONDUCTOR DETECTORS; HEAT TREATMENTS; MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS; SPECTROSCOPY
Optional Information
- Secondary number(s)
- CONF-951073--.