Published August 6, 2007
| Version v1
Journal article
Fabrication of organic light-emitting diode pixels by laser-assisted forward transfer
Creators
- 1. Paul Scherrer Institut, General Energy Research Department, 5232 Villigen PSI (Switzerland)
- 2. Empa, Swiss Federal Laboratories for Materials Testing and Research, Laboratory for Functional Polymers, Ueberlandstrasse 129, 8600 Duebendorf (Switzerland)
Description
Fabrication of a polymer light-emitting device was achieved by a laser forward transfer technique using the decomposition of a thin triazene polymer film by a XeCl excimer laser. The dry deposition process allows transfer of a bilayer consisting of the electroluminescent polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] covered with an aluminum electrode onto a receiver substrate. The soft transfer results in laterally well resolved pixels (≅500 μm), whose fluorescence as well as electroluminescence spectra remain unaltered. The rectifying and smooth current-voltage characteristics add to the merits of this laser-based transfer method that opens up the possibility of direct-writing heat- and UV-sensitive materials
Additional details
Identifiers
- DOI
- 10.1063/1.2759475;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 91
- Journal Issue
- 6
- Journal Page Range
- p. 061103-061103.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39038296
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; DECOMPOSITION; DEPOSITION; ELECTRODES; ELECTROLUMINESCENCE; EXCIMER LASERS; FABRICATION; FILMS; FLUORESCENCE; LIGHT EMITTING DIODES; POLYMERS; SUBSTRATES
- Descriptors DEC
- CHEMICAL REACTIONS; ELEMENTS; EMISSION; GAS LASERS; LASERS; LUMINESCENCE; METALS; PHOTON EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- (c) 2007 American Institute of Physics