Published February 2008 | Version v1
Journal article Metadata-only

Preparation and characterization of tantalum-doped indium tin oxide films deposited by magnetron sputtering

Creators

  • 1. Key Laboratory of the Ministry of Education for High Temperature Materials and Testing, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China)
  • 2. College of Science, Donghua University, Shanghai 200051 (China)

Description

Tantalum-doped indium tin oxide films were deposited by co-sputtering with two-targets. Tantalum-doping strengthened the orientation of the (4 0 0) plane and resulted in better crystalline structure, larger grain size and lower surface roughness. Tantalum-doping also revealed better optical-electrical properties and a larger optical band gap. Carrier concentration was increased by tantalum-doping, which had an important influence on optical-electrical properties

Availability note (English)

Available from http://dx.doi.org/10.1016/j.scriptamat.2007.09.028

Additional details

Identifiers

DOI
10.1016/j.scriptamat.2007.09.028;
PII
S1359-6462(07)00683-5;

Publishing Information

Journal Title
Scripta Materialia
Journal Volume
58
Journal Issue
3
Journal Page Range
p. 203-206
ISSN
1359-6462
CODEN
SCMAF7

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39067921
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DOPED MATERIALS; ELECTRICAL PROPERTIES; FILMS; GRAIN SIZE; INDIUM COMPOUNDS; MAGNETRONS; OPTICAL PROPERTIES; ORIENTATION; SPUTTERING; SURFACES; TANTALUM COMPOUNDS; TIN OXIDES
Descriptors DEC
CHALCOGENIDES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; MATERIALS; MICROSTRUCTURE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SIZE; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.