Optimization of near and far patterns field in InxGa1-xN Lasers

The introduction on the market of lasers based on InxGa1-xN emitted at short wavelengths (λ = 430-450 nm), has enabled a considerable increase of the density of data storage on optical discs. However, despite the successes in the manufacture of these lasers are still far from being optimized. One of the difficulties present in these structures is the technological difficulty to grow InxGa1-xN cladding layers with high aluminum content (x>0.13) and wide enough to ensure the necessary optical confinement. This difficulty is due to the network constant difference between the AlxGa1-xN and the GaN and the presence of narrow cladding layers causes the undesirable high-order modes in [1] far field patterns. This paper analyzes the influence of the thickness of the layers that form the structure on the patterns of field near and far InxGa1-xN structures with multiple quantum wells in the active area. Structures are compared with staggered and parabolic variation of the refractive index. Found that with appropriate combinations of the thickness of this layer the detrimental effects that appear in from near and far field patterns can be eliminated without the need to grow very wide cladding layers, which represents an alternative solution to this technological problem [2]. [1] M. Onomura et al, IEEE J. Sel. Top. Quantum Electron. 5 (1999) 76. [2] J.A. Martín et al. Superlattices and Microstructures 43 (200 8) 575.