Published July 1998
| Version v1
Journal article
Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
Creators
- 1. Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090 Novosibirsk (Russian Federation)
- 2. A.I. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)
Description
X-ray spectral microanalysis, optical transmission measurements at near-infrared wavelengths, and x-ray diffractometry are used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads to an increase in the concentration of excess arsenic trapped in the growing layer
Additional details
Identifiers
- DOI
- 10.1134/1.1187485;
- PII
- S1063-7826(98)00307-X;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 32
- Journal Issue
- 7
- Journal Page Range
- p. 692-695
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051797
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- ARSENIC; CRYSTAL DEFECTS; CRYSTAL DOPING; EXPERIMENTAL DATA; GALLIUM ARSENIDES; INDIUM; INFRARED SPECTRA; ION IMPLANTATION; LAYERS; MOLECULAR BEAM EPITAXY; NEAR INFRARED RADIATION; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DATA; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; EPITAXY; FILMS; GALLIUM COMPOUNDS; INFORMATION; INFRARED RADIATION; MATERIALS; METALS; NUMERICAL DATA; PNICTIDES; RADIATIONS; SCATTERING; SEMIMETALS; SPECTRA
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 32, 778-781 (July 1998); (c) 1998 American Institute of Physics.