Published December 15, 2009
| Version v1
Journal article
Point defects generated by oxidation of silicon crystal surface
- 1. I. M. R., Tohoku University, Sendai 980-8577 (Japan)
- 2. C. I. R., Tohoku University, Sendai 980-8578 (Japan)
Description
To study the generation of interstitials and vacancies due to oxidation of silicon crystals, we applied a quenching method, namely, oxidation at high temperatures in mixed gases of water vapor and hydrogen gas followed by the quenching into water. Contrary to our expectation that the interstitial concentration is high, the vacancy concentration generated due to the short period of oxidation is higher than that of the thermal equilibrium concentration.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.08.262Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.08.262;
- PII
- S0921-4526(09)01033-3;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 23-24
- Journal Page Range
- p. 5156-5158
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 25. international conference on defects in semiconductors
- Dates
- 20-24 Jul 2009
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41089760
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; INTERSTITIALS; OXIDATION; POINT DEFECTS; QUENCHING; SILICON; SURFACES; THERMAL EQUILIBRIUM; VACANCIES; WATER; WATER VAPOR
- Descriptors DEC
- CHEMICAL REACTIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; EQUILIBRIUM; FLUIDS; GASES; HYDROGEN COMPOUNDS; OXYGEN COMPOUNDS; POINT DEFECTS; SEMIMETALS; VAPORS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.