Published February 28, 1998
| Version v1
Journal article
Resonant tunneling through a single-electron transistor
Creators
- 1. Institut fur Theoretische Festkorperphysik, Universitat Karlsruhe (Germany)
Description
no abstract available
Availability note (English)
Available from http://dx.doi.org/10.1070/PU1998v041n02ABEH000353Additional details
Identifiers
Publishing Information
- Journal Title
- Physics Uspekhi
- Journal Volume
- 41
- Journal Issue
- 2
- Journal Page Range
- p. 159-164
- ISSN
- 1063-7869
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40070951
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ELECTRONS; TRANSISTORS; TUNNEL EFFECT
- Descriptors DEC
- ELEMENTARY PARTICLES; FERMIONS; LEPTONS; SEMICONDUCTOR DEVICES
Optional Information
- Notes
- Abstract only