Published June 3, 2013 | Version v1
Journal article

Catalyst free growth of ZnO nanorods by thermal evaporation method

  • 1. Centre for Research in Microelectronics (CRME), Department of Electronics Engineering Indian Institute of Technology (Banaras Hindu University), Varanasi Uttar Pradesh-221005 (India)

Description

In this work, we report catalyst free growth of ZnO nanorods on n-Si substrate by a low cost thermal evaporation method. The surface morphology, chemical composition and crystalline structure of ZnO nanorods have been determined by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) spectroscopy respectively. It is found that, the as –deposited ZnO seed layer reduces lattice mismatching between ZnO and Si from 40.3 to 0.28%, therefore enhances the subsequent growth and crystalline quality of ZnO nanorods on Si substrate. The present methodology is simple, cost effective and highly applicable for synthesis of ZnO nanorods for optoelectronics applications.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1536
Journal Issue
1
Journal Page Range
p. 125-126
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
International conference on recent trends in applied physics and material science
Acronym
RAM 2013
Dates
1-2 Feb 2013
Place
Bikaner, Rajasthan (India)

Optional Information

Notes
(c) 2013 AIP Publishing LLC