Published July 1999
| Version v1
Journal article
X-ray photoemission and photoabsorption of organic electroluminescent materials
Creators
- 1. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706-1390 (United States)
- 2. Department of Applied Science, University of California-Davis, Livermore, California 94550 (United States)
- 3. Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)
- 4. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Description
Thin films of tris-(8, hydroxyquinoline) aluminum (Alq3) and N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) were measured using synchrotron radiation-based core and valence level photoemission and core level photoabsorption to elucidate the element-specific electronic structure of organic electroluminescent materials. The energy level alignment of an Alq3/TPD interface is given for both occupied and unoccupied states. A comparison of freshly evaporated films of Alq3 and TPD with films that have been exposed to intense radiation or oxidative conditions sheds light on possible damage mechanisms of the molecular solid. copyright 1999 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 86
- Journal Issue
- 1
- Journal Page Range
- p. 88-93
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30038666
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; ORGANIC COMPOUNDS; ORGANOMETALLIC COMPOUNDS; PHOTOEMISSION; SYNCHROTRON RADIATION; THIN FILMS; X-RAY SPECTROSCOPY
- Descriptors DEC
- BREMSSTRAHLUNG; ELECTROMAGNETIC RADIATION; EMISSION; FILMS; LUMINESCENCE; ORGANIC COMPOUNDS; PHOTON EMISSION; RADIATIONS; SECONDARY EMISSION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY