Published 1986
| Version v1
Report
Restricted
Total-dose and annealing studies - implications for hardness assurance testing
Description
A series of experiments on CMOS devices covering a wide range of dose rate, bias, and annealing conditions is described. These experiments provide a technical basis for making recommendations in support of improved steady-state total-dose irradiation procedures
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE86006464.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 6 p.
- Report number
- SAND--86-0280C
Conference
- Title
- 23. annual conference on nuclear and space radiation effects.
- Dates
- 20-23 Jul 1986.
- Place
- Providence, RI (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17089975
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRICAL PROPERTIES; IRRADIATION PROCEDURES; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; TESTING
- Descriptors DEC
- PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-860706--5.