Published July 2012 | Version v1
Journal article Metadata-only

Diode-pumped passively mode-locked Nd:GGG laser at 1331.3 nm

Creators

  • 1. State Key Laboratory of Crystal Materials, Shandong University, Ji'nan 250100 (China)
  • 2. Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics Qufu Normal University, Qufu 273165 (China)

Description

The performance of the passively continuous-wave mode-locked Nd-doped gadolinium gallium garnet (Nd:GGG) laser at 1331.3 nm with a semiconductor saturable absorber mirror (SESAM) was investigated for the first time to our knowledge. At the absorbed pumped power of 5.36 W, an average output power of 467 mW was obtained with a slope efficiency of 10%. The minimum pulse duration was measured to be 5 ps with a repetition rate of 33 MHz

Availability note (English)

Available from http://dx.doi.org/10.7452/lapl.201210022

Additional details

Identifiers

DOI
10.7452/lapl.201210022;

Publishing Information

Journal Title
Laser physics letters (Internet)
Journal Volume
9
Journal Issue
7
Journal Page Range
p. 481-484
ISSN
1612-202X

INIS

Country of Publication
Russian Federation
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46020359
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
DIODE-PUMPED SOLID STATE LASERS; DOPED MATERIALS; ENERGY EFFICIENCY; GADOLINIUM COMPOUNDS; GALLIUM OXIDES; LASER RADIATION; MIRRORS; MODE LOCKING; NEODYMIUM COMPOUNDS; NEODYMIUM LASERS; OPTICS; PULSES; SEMICONDUCTOR MATERIALS
Descriptors DEC
CHALCOGENIDES; EFFICIENCY; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; LASERS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; RARE EARTH COMPOUNDS; SOLID STATE LASERS