Published November 1995
| Version v1
Journal article
MRS silicon avalanche detectors with negative feedback for Time-of-Flight systems
Creators
- 1. Joint Inst. for Nuclear Research, Dubna (Russian Federation). Lab. of High Energy
- 2. INFN, Sezione di Padova (Italy)
- 3. Lebedev Physical Institute, Moscow (Russian Federation)
- 4. SSCL (United States)
Description
Investigation of time characteristics of silicon avalanche detectors with negative feedback based on Metal-Resistive layer-Semiconductor structure, proposed for Time-of-Flight systems, is described in this paper. Time resolutions of 550ps on β-electrons and 250ps on LED light pulses were obtained. Design and principles of operation are described briefly. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Physics. B, Proceedings Supplements
- Journal Volume
- 44
- Journal Page Range
- p. 402-405.
- ISSN
- 0920-5632
- CODEN
- NPBSE7
Conference
- Title
- 4. international conference on advanced technology and particle physics.
- Dates
- 3-7 Oct 1994.
- Place
- Como (Italy).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27019935
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BETA DETECTION; BREAKDOWN; DIELECTRIC MATERIALS; FEEDBACK; HETEROJUNCTIONS; JUNCTION DETECTORS; SI SEMICONDUCTOR DETECTORS; TIME RESOLUTION; TIME-OF-FLIGHT METHOD
- Descriptors DEC
- CHARGED PARTICLE DETECTION; DETECTION; MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTION; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR JUNCTIONS; TIMING PROPERTIES