Published December 2001
| Version v1
Book
Ion-implanted silicon detectors for low-energy γ-rays
Creators
- 1. Nuclear Radiation Detector Section, TP and PED, Bhabha Atomic Research Centre, Mumbai (India)
Description
Ion-implanted p+/n type Si charged-particle detectors are now fabricated by Post-Implantation Oxide Passivation Method (PIOPM). The performance of a few such small area(∼12 mm2) detectors for low-energy γ-rays at room temperature is reported
Additional details
Publishing Information
- Publisher
- Bhabha Atomic Research Centre
- Imprint Place
- Mumbai (India)
- Imprint Title
- DAE-BRNS symposium on nuclear physics: contributed papers. V. 44B
- Imprint Pagination
- 540 p.
- Journal Page Range
- p. 402-403
Conference
- Title
- 44. DAE-BRNS symposium on nuclear physics
- Dates
- 26-30 Dec 2001
- Place
- Kolkata (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 36070293
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; ENERGY RESOLUTION; GAMMA DETECTION; GAMMA RADIATION; ION IMPLANTATION; LEAKAGE CURRENT; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PERFORMANCE; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- CURRENTS; DETECTION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MATERIALS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTION; RADIATION DETECTORS; RADIATIONS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- 1 ref., 4 figs., 1 tab.