Published January 2001 | Version v1
Journal article Metadata-only

Photosensitive indium-doped Pb1-xSnxSe epitaxial layers

Creators

  • 1. Institute of photoelectron of Azerbaijan National Academy of Sciences, Baku (Azerbaijan)

Description

Experimental data on the photoconductivity of indium-doped Pb1-xSnxSe (0.03≤ x≤ 0.08) epitaxial layers are presented. The influence of indium impurity Pb1-xSnxSe leads to displacement of the spectral maximum of photosensitivity in the visible-wave range of spectrum owing to increasing the width band gap in In-doped Pb1-xSnxSe solid solution

Additional details

Additional titles

Original title (Russian)
Фоточувствительние эпитаксиальние слои Пб

Publishing Information

Journal Title
Fizika (Baku)
Journal Volume
7
Journal Issue
1
Journal Page Range
p. 6-7
ISSN
1028-8546

INIS

Country of Publication
Azerbaijan
Country of Input or Organization
Azerbaijan
INIS RN
35024653
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL DOPING; EPITAXY; IMPURITIES; INDIUM; LAYERS; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; SOLID SOLUTIONS; VISIBLE SPECTRA
Descriptors DEC
CRYSTAL GROWTH METHODS; DISPERSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; HOMOGENEOUS MIXTURES; METALS; MIXTURES; PHYSICAL PROPERTIES; SENSITIVITY; SOLUTIONS; SPECTRA

Optional Information

Notes
3 refs., 2 figs.