Published December 2018 | Version v1
Journal article

Analysis of the low-temperature dielectric relaxation in CH3NH3PbI3 partially substituted with Sn and Ba

  • 1. Suranaree University of Technology, School of Physics, Institute of Science, and NANOTEC-SUT COE on Advanced Functional Nanomaterials (Thailand)
  • 2. Vidyasirimedhi Institute of Science and Technology (VISTEC), School of Energy Science and Engineering (Thailand)
  • 3. National Institute for Materials Science (Japan)

Description

In this work, we partially replaced Pb with non-toxic elements to form hybrid perovskites CH3NH3Pb0.9M0.1I3, where M=Sn2+ and Ba2+ and studied their dielectric properties. According to room-temperature Rietveld analysis, all compositions with 10 % substitution were tetragonal with a space group I4/mcm. A notable dielectric relaxation was detected at T60100 K, far below the orthorhombic-to-tetragonal phase transition at T155 K. To clarify the conflicting literature reports, the dielectric relaxation was fitted to both Arrhenius and Vogel–Fulcher models and showed no indication of the finite (i.e. non-zero) dipolar freezing temperature. It is concluded, therefore, that the low-T dielectric dispersion is a signature of the Debye-type thermally activated re-orientation of the non-interacting electric dipoles with an activation energy of Ea123171 meV.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing (Print)
Journal Volume
124
Journal Issue
12
Journal Page Range
p. 1-7
ISSN
0947-8396
CODEN
APAMFC

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Copyright
Copyright (c) 2018 Springer-Verlag GmbH Germany, part of Springer Nature