Influence of solid-state electrolyte on 2D SnS₂ field effect transistors

Transition metal-dichalcogenides (TMDs) have attracted considerable interests due to their unique combination of gate-tunable charge carriers, high mobility, and sizable band gap. Here, we report the effect of solid-state ionic liquid top-gate on SnS₂ field effect transistors (FETs). The transport measurements indicate that the threshold voltage V _th in transport curves shifts significantly in the positive V _tg direction. By utilizing a hybrid solid-state ionic liquid/solid electric dual-gate geometry acting on the SnS₂ channel, an enhancement of carrier mobility is observed due to the reduction of barrier height by band bending and the increase of carrier concentration. Our study provides a framework for understanding the effect of different dielectrics on SnS₂ FETs and paves the way for further exploration of their prospects for electronic and optoelectronic devices. (paper)