Published May 2004 | Version v1
Journal article

Dynamics of multimode semiconductor lasers

  • 1. Optique nonlineaire theorique, Universite Libre de Bruxelles, Campus Plaine Code Postale 231, B-1050 Brussels (Belgium)
  • 2. Institut Non-lineaire de Nice, UMR 6618 Centre National de la Recherche Scientifique, Universite de Nice Sophia-Antipolis, 06560 Valbonne (France)

Description

We analyze multi-longitudinal-mode semiconductor lasers experimentally. We show that the intensity of each mode displays large amplitude oscillations but obeys a highly organized antiphase dynamics leading to an almost constant total intensity output. For each mode, regular switching is observed in the megahertz range, while the optical frequency as a function of time follows a well defined sequence from blue to red. Using a multimode theoretical model, we identify that four-wave mixing is the dominant mechanism at the origin of the observed dynamics. The asymmetry of the susceptibility function of semiconductor materials allows us to explain the optical frequency sequence

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review. A
Journal Volume
69
Journal Issue
5
Journal Page Range
p. 053816-053816.9
ISSN
1050-2947
CODEN
PLRAAN

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36084694
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
AMPLITUDES; ASYMMETRY; FREQUENCY MIXING; MIXING; NOISE; NONLINEAR PROBLEMS; OSCILLATIONS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; TIME DEPENDENCE
Descriptors DEC
LASERS; MATERIALS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS

Optional Information

Notes
(c) 2004 The American Physical Society