Shallow junction formation in silicon

In this paper, the authors demonstrate a new method of doping silicide films which uses a pulsed excimer laser and a wafer cell which is filled with dopant gas species, e.g. BF3, AsF5, PF5. A spatially homogenized 308nm XeCl pulsed laser is used as a heating source to drive adsorbed dopant gas species into the silicide, as well as to out diffuse dopants into the silicon substrate. The total dose, interface concentration, and junction depth, as controlled by varying the number of laser pulses. High interface concentrations (Cint >1020 atoms/cm3) and shallow junctions (xj < 1500 Angstrom) are obtained using this technique. Laser irradiation also results in smoothing of the silicide film