Textured CeO2 buffer layers on amorphous substrates by ion beam assisted deposition

CeO2 buffer layers have been deposited on amorphous quartz glass substrates by ion beam assisted deposition (IBAD). The growth of the films was studied as a function of various deposition parameters like substrate temperature, angle of incidence of the assist beam, ion to atom ratio, film thickness, etc. At optimized deposition conditions (1 0 0) textured growth was achieved with out-of-plane mosaic spreads of 7 deg. and in-plane alignment of 12 deg. The experiments have shown that low atomic mobility obtained by low substrate temperatures and appropriate ion to atom ratios are advantageous for the (1 0 0) texture formation. The optimized angle of incidence of 55 deg. indicates that both {1 1 0} planar and [1 1 1] axial channeling effects contribute to the in-plane alignment. Best textured growth was achieved for films with thicknesses above 700 nm. First YBaCuO films deposited on such buffer layers revealed mosaic spreads of 1.3 deg. and superconducting transitions above 80 K