Capture cross section measurements on deep levels in semiconductors

The work presented in this dissertation had its focus on designing and developing an electronic circuit for pulse train technique (PTT) to measure the capture cross sections of deep levels in semiconductors. The electronic circuit was tested extensively by changing different experimental parameters. To support the results obtained by PTT and comparing it with measured values of capture cross section for this level using DLTS. These results demonstrated the advantage of the PTT in eliminating the edge effect which is prominent in DTLS measurement. (orig./A.B.)