Growth of single walled carbon nanotubes networks using Al - Ni as catalyst

The growth of SWCNTs networks on the SiO₂ chips was examined for different growth temperatures and annealing times. According to Raman spectroscopy the temperature is a significant parameter which affects quality of carbon nanotubes. For higher temperatures (850 - 900 deg C) the best quality was achieved. On the other hand, the different annealing times did not affect results of our experiments. SWCNTs network consists of large amount of intersecting carbon nanotubes. This network is electrically conductive over large distances. The SWCNTs networks can be used as transparent conductive layer or as sensitive layer of chemical sensors. (authors)