Published March 16, 1989 | Version v1
Journal article Metadata-only

Annealing stages of implanted silicon

Creators

  • 1. Universita J.E. Purkyne, Brno (Czechoslovakia)
  • 2. Technical Univ., Bratislava (Czechoslovakia). Dept. of Microelectronics

Description

The correlation of excess carrier recombination in implanted layers with the electrical activity of these layers is investigated. It is found that optimum annealing conditions take place for maximum electrical activity and minimum recombination center concentration. (author)

Additional details

Publishing Information

Journal Title
Physica Status Solidi A
Journal Volume
112
Journal Issue
1
Series
Phys. Status Solidi A.
Journal Page Range
327-330
ISSN
0031-8965
CODEN
PSSAB

Conference

Title
International conference on ion implantation in semiconductors and other materials.
Dates
12-17 Sep 1988.
Place
Lublin (Poland).

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
20064752
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; BORON ISOTOPES; CARRIER DENSITY; CARRIER MOBILITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HALL EFFECT; ION IMPLANTATION; MAGNETIC FIELDS; PHOSPHORUS 31; PHOTOELECTRIC EFFECT; PHOTOVOLTAIC EFFECT; RADIATION DOSES; RECOMBINATION; SILICON; SURFACES
Descriptors DEC
ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; ISOTOPES; LIGHT NUCLEI; MATERIALS; MOBILITY; NUCLEI; ODD-EVEN NUCLEI; PHOSPHORUS ISOTOPES; PHYSICAL PROPERTIES; SEMIMETALS; STABLE ISOTOPES