Published May 2003 | Version v1
Journal article Metadata-only

Laser Raman-Spectroscopy of Ternary Mixed Crystals GaAsxP1-x and GaxAl1-xAs Synthesized by Ion Implantation

Creators

  • 1. Institute of Inorganic Chemistry and Electrochemistry, Tbilisi (Georgia)

Description

By P and AL ion implantation of GaAs an amorphous GaAsxP1-x and GaxAl1-xAs have been synthesized. Due to the high temperature annealing in vacuum the crystal phases of the aove-mentioned compaunds have been received. Crystallization dynamics has been studied by laser Raman-spectroscopy. (authors)

Additional details

Publishing Information

Journal Title
Bulletin of the Georgian National Academy of Sciences
Journal Volume
167
Journal Issue
3
Journal Page Range
p. 422-424
ISSN
0132-1447

INIS

Country of Publication
Georgia
Country of Input or Organization
Georgia
INIS RN
45091580
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ABSORPTION SPECTROSCOPY; ALUMINIUM IONS; ANNEALING; CRYSTALLIZATION; CRYSTALS; ION IMPLANTATION; LASERS; PHOSPHORUS; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0400-1000 K; X-RAY SPECTROSCOPY
Descriptors DEC
CHARGED PARTICLES; ELEMENTS; HEAT TREATMENTS; IONS; LASER SPECTROSCOPY; MATERIALS; NONMETALS; PHASE TRANSFORMATIONS; SPECTROSCOPY; TEMPERATURE RANGE

Optional Information

Notes
8 refs., 4 figs.