Published 1984 | Version v1
Report

Deterministic studies of an irradiated free running Josephson tunnel junction model

Description

This work details a deterministic study of an irradiated free running Josephson tunnel junction model. The basic model is that of a tunnel junction with nonnegligible capacitance shunted by an external resistance. A voltage can be induced and maintained across the junction through external irradiation, and various theoretical treatments have been employed to explain these effects. Here, one of these treatments is generalized, and a new treatment is offered to remedy problems in former discussions and provide a more complete description. After relevant discussions of the Josephson effects, the free running Josephson junction itself is considered. This includes the major experimental and theoretical treatments from the literature and a detailed discussion and amplification of a theory distinguished by its treatment of the induced voltage as a dynamical variable and its consideration of the radiation dynamics

Availability note (English)

University Microfilms Order No. 85-08,309.

Additional details

Publishing Information

Imprint Pagination
219 p.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
17014900
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Thesis, Non-conventional Literature
Descriptors DEI
IRRADIATION; JOSEPHSON JUNCTIONS; MATHEMATICAL MODELS; TUNNEL EFFECT
Descriptors DEC
SEMICONDUCTOR JUNCTIONS