Published July 15, 2005 | Version v1
Journal article

Shapes of isolated domains and field induced evolution of regular and random 2D domain structures in LiNbO3 and LiTaO3

  • 1. Ferroelectric Laboratory, Ural State University, 51 Lenin Ave., 620083 Ekaterinburg (Russian Federation)
  • 2. Advanced Material Laboratory, National Institute for Materials Science, 305-0044 Tsukuba (Japan)
  • 3. Optical Research Center, University of Southampton, Highfield, Mountbatten Bldg., SO17 1BJ Southampton (United Kingdom)

Description

The variety of the shapes of isolated domains, revealed in congruent and stoichiometric LiTaO3 and LiNbO3 by chemical etching and visualized by optical and scanning probe microscopy, was obtained by computer simulation. The kinetic nature of the domain shape was clearly demonstrated. The kinetics of domain structure with the dominance of the growth of the steps formed at the domain walls as a result of domain merging was investigated experimentally in slightly distorted artificial regular two-dimensional (2D) hexagonal domain structure and random natural one. The artificial structure has been realized in congruent LiNbO3 by 2D electrode pattern produced by photolithography. The polarization reversal in congruent LiTaO3 was investigated as an example of natural domain growth limited by merging. The switching process defined by domain merging was studied by computer simulation. The crucial dependence of the switching kinetics on the nuclei concentration has been revealed

Additional details

Identifiers

DOI
10.1016/j.mseb.2005.02.007;
PII
S0921-5107(05)00093-0;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
120
Journal Issue
1-3
Journal Page Range
p. 109-113
ISSN
0921-5107
CODEN
MSBTEK

Conference

Title
8. international symposium on ferroic domains
Acronym
ISFD-8
Dates
24-27 Aug 2004
Place
Tsukuba (Japan)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.