Published May 17, 1989
| Version v1
Patent
Radiation sensitive resist material
Description
A radiation sensitive resist material for photolithography in the manufacture of microelectronic devices. The material comprises a polymerisation product of a substituted styrene in which at least twenty mole percent is a substituted styrene containing a substituent in the ortho-position. The presence of the ortho-substituent gives improved properties such as contrast and resistance to solvent-induced swelling so that an accurate resist pattern can be formed. Preferred monomers include 2:5 dimethylstyrene, 2, 4, 6 trimethylstyrene. Chloromethylstyrenes are also specified. (author)
Availability note (English)
Available from The Patent Office, Sales Branch, St. Mary Cray, Orpington, Kent BR5 3RD.Additional details
Publishing Information
- Imprint Pagination
- 7 p.
- IPC:
- Int. Cl. G03g 5/022; C08f 212/04; C08f 212/14.
- IPC
- Int. Cl. G03g 5/022; C08f 212/04; C08f 212/14.
- Patent number
- GB patent document 2209529/A/
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 21014570
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- FABRICATION; MICROELECTRONIC CIRCUITS; PHOTOSENSITIVITY; PHYSICAL RADIATION EFFECTS; POLYSTYRENE; SPECIFICATIONS; SURFACE COATING; ULTRAVIOLET RADIATION
- Descriptors DEC
- DEPOSITION; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; POLYMERS; POLYOLEFINS; POLYVINYLS; RADIATION EFFECTS; RADIATIONS; SENSITIVITY
Optional Information
- Secondary number(s)
- GB patent application 8721229.6.