Published May 17, 1989 | Version v1
Patent

Radiation sensitive resist material

Description

A radiation sensitive resist material for photolithography in the manufacture of microelectronic devices. The material comprises a polymerisation product of a substituted styrene in which at least twenty mole percent is a substituted styrene containing a substituent in the ortho-position. The presence of the ortho-substituent gives improved properties such as contrast and resistance to solvent-induced swelling so that an accurate resist pattern can be formed. Preferred monomers include 2:5 dimethylstyrene, 2, 4, 6 trimethylstyrene. Chloromethylstyrenes are also specified. (author)

Availability note (English)

Available from The Patent Office, Sales Branch, St. Mary Cray, Orpington, Kent BR5 3RD.

Additional details

Publishing Information

Imprint Pagination
7 p.
IPC:
Int. Cl. G03g 5/022; C08f 212/04; C08f 212/14.
IPC
Int. Cl. G03g 5/022; C08f 212/04; C08f 212/14.
Patent number
GB patent document 2209529/A/

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
21014570
Subject category
S07: ISOTOPES AND RADIATION SOURCES; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
FABRICATION; MICROELECTRONIC CIRCUITS; PHOTOSENSITIVITY; PHYSICAL RADIATION EFFECTS; POLYSTYRENE; SPECIFICATIONS; SURFACE COATING; ULTRAVIOLET RADIATION
Descriptors DEC
DEPOSITION; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; POLYMERS; POLYOLEFINS; POLYVINYLS; RADIATION EFFECTS; RADIATIONS; SENSITIVITY

Optional Information

Secondary number(s)
GB patent application 8721229.6.