Simulation of X-ray diffraction profiles in multilayers by direct wave summation: Application to asymmetric reflections
- 1. Rafael Ltd., P.O. Box 2250, Haifa 31021 (Israel)
- 2. Cyoptics Ltd., P.O. Box 207, Yokneam Ilit 20692 (Israel)
- 3. Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)
Description
A novel algorithm for the simulation of the X-ray diffraction profiles in multilayers is developed, which can be applied to any multilayered structure, with no limitations. The simulation program in the MATLAB format is based on the direct summation of waves scattered by individual atomic planes. It takes into account the strain and concentration-induced fluctuations of interplanar spacings, interface roughness and buried amorphous layers, and enables adding the diffuse scattering contributions of the Gaussian or Lorentzian types. The summation over individual layers can be done coherently or incoherently, depending on the interface structure. In order to visualize the steps of the fitting procedure, the contribution of each layer can be plotted separately. In this paper the simulation routine is described with a focus on handling asymmetric reflections. We stress that in this case, the effective thickness of the layers, participating in the formation of diffraction signals, can be very different for low or high X-ray incidence angles. We also show that in contrast to symmetric reflections, when treating the asymmetric ones, an additional phase shift depending on the distance between the sample and detector, should be taken into account. The simulation program is applied to fit experimental diffraction profiles, symmetric and asymmetric, taken from the MOVPE-grown heterostructures and superlattices of practical importance, based on the InGaAsP/InP materials system
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2006.05.104;
- PII
- S0169-4332(06)00822-1;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 253
- Journal Issue
- 1
- Journal Page Range
- p. 118-123
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- Symposium P, Current trends in optical and X-ray metrology of advanced materials for nanoscale devices
- Acronym
- E-MRS 2005 spring meeting
- Dates
- 31 May - 3 Jun 2005
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38106048
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ASYMMETRY; DIFFUSE SCATTERING; GALLIUM ARSENIDES; INCIDENCE ANGLE; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LAYERS; NONDESTRUCTIVE TESTING; REFLECTION; SEMICONDUCTOR MATERIALS; SIMULATION; STRAINS; SUPERLATTICES; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MATERIALS TESTING; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING; TESTING
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.