Published October 31, 2006 | Version v1
Journal article

Simulation of X-ray diffraction profiles in multilayers by direct wave summation: Application to asymmetric reflections

  • 1. Rafael Ltd., P.O. Box 2250, Haifa 31021 (Israel)
  • 2. Cyoptics Ltd., P.O. Box 207, Yokneam Ilit 20692 (Israel)
  • 3. Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

Description

A novel algorithm for the simulation of the X-ray diffraction profiles in multilayers is developed, which can be applied to any multilayered structure, with no limitations. The simulation program in the MATLAB format is based on the direct summation of waves scattered by individual atomic planes. It takes into account the strain and concentration-induced fluctuations of interplanar spacings, interface roughness and buried amorphous layers, and enables adding the diffuse scattering contributions of the Gaussian or Lorentzian types. The summation over individual layers can be done coherently or incoherently, depending on the interface structure. In order to visualize the steps of the fitting procedure, the contribution of each layer can be plotted separately. In this paper the simulation routine is described with a focus on handling asymmetric reflections. We stress that in this case, the effective thickness of the layers, participating in the formation of diffraction signals, can be very different for low or high X-ray incidence angles. We also show that in contrast to symmetric reflections, when treating the asymmetric ones, an additional phase shift depending on the distance between the sample and detector, should be taken into account. The simulation program is applied to fit experimental diffraction profiles, symmetric and asymmetric, taken from the MOVPE-grown heterostructures and superlattices of practical importance, based on the InGaAsP/InP materials system

Additional details

Identifiers

DOI
10.1016/j.apsusc.2006.05.104;
PII
S0169-4332(06)00822-1;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
253
Journal Issue
1
Journal Page Range
p. 118-123
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
Symposium P, Current trends in optical and X-ray metrology of advanced materials for nanoscale devices
Acronym
E-MRS 2005 spring meeting
Dates
31 May - 3 Jun 2005
Place
Strasbourg (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38106048
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ASYMMETRY; DIFFUSE SCATTERING; GALLIUM ARSENIDES; INCIDENCE ANGLE; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERFACES; LAYERS; NONDESTRUCTIVE TESTING; REFLECTION; SEMICONDUCTOR MATERIALS; SIMULATION; STRAINS; SUPERLATTICES; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MATERIALS TESTING; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING; TESTING

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.