Radiation defects in H+-irradiated p-CdSiAs2 and p-ZnSiAs2 crystals
- 1. Tomskij Gosudarstvennyj Univ. (USSR). Sibirskij Fiziko-Tekhnicheskij Inst.
- 2. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.
Description
The effect of proton (5 MeV) bombardment at 300 K on the electrical properties of p-CdSiAs2 and p-ZnSiAs2 crystals are investigated. The resistivity near 300 K against dose curve shows an 'anomaly'. It goes through a maximum (rho = approximately 109 to 1011 ohm cm) at D = 5 x 1015 H+/cm2 and for D excess of 5 x 1015 H+/cm2 the electrical resistivity decreases with dose up to approximately 103 ohm cm for D = 1017 H+/cm2. All heavy H+-irradiated samples of CdSiAs2 and ZnSiAs2 had near 300 K according to thermopower measurements p-type conductivity. It is suggested that the 'impurity' band conduction takes place in the high proton damaged layers of CdSiAs2 and ZnSiAs2 compounds. Some annealing stages of donor- and acceptor-type defects are discovered in H+-irradiated samples. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Eff.
- Journal Volume
- 59
- Journal Issue
- 3-4
- Series
- Radiat. Eff.
- Journal Page Range
- 211-215
- ISSN
- 0033-7579
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13683553
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CADMIUM ARSENIDES; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; IMPURITIES; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROTONS; RADIATION DOSES; SILICON ARSENIDES; ZINC ARSENIDES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CADMIUM COMPOUNDS; CATIONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; HADRONS; HEAT TREATMENTS; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; IONS; NUCLEONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; ZINC COMPOUNDS