Published November 12, 2008
| Version v1
Journal article
The use of molecular beam epitaxy for the synthesis of high purity III-V nanowires
- 1. Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany)
Description
The synthesis methods and properties of catalyst-free III-V nanowires with molecular beam epitaxy (MBE) are reviewed. The two main techniques are selective-area epitaxy (SAE) and gallium-assisted synthesis. The excellent structure and ultra-high purity characteristics of the grown nanowires are presented by Raman and photoluminescence spectroscopy.
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/20/45/454225Additional details
Identifiers
- DOI
- 10.1088/0953-8984/20/45/454225;
- PII
- S0953-8984(08)80982-4;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 20
- Journal Issue
- 45
- Journal Page Range
- [5 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
Conference
- Title
- 15. international winterschool on new developments in solid state physics
- Dates
- 18-22 Feb 2008
- Place
- Mauterndorf, Bad Hofgastein (Austria)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41008301
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CATALYSTS; GALLIUM COMPOUNDS; IMPURITIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM WIRES; RAMAN SPECTROSCOPY; SPECTROSCOPY; SYNTHESIS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; LASER SPECTROSCOPY; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; SPECTROSCOPY