Published 1996
| Version v1
Book
Micro ion-beam studies on self-assembled epitaxial Au4Si islands on Br-passivated Si(111) surfaces
Creators
- 1. Institute of Physics, Bhubaneswar (India)
- 2. State University of New York at Albany, Albany (United States)
Description
Growth of epitaxial gold silicide islands (triangular, trapezoidal) over a thin uniform layer of gold silicide have been observed, when an Au thin film (740 A) deposited on Br-passivated Si(111) surface, was annealed around the Au-Si eutectic temperature under high vacuum (∼10-6 Torr). The general features of the growth of these islands are comparable to those obtained under ultra high vacuum conditions. Here we present some of the results on such structures using the micro ion-beam facility in State University of New York at Albany
Additional details
Publishing Information
- Publisher
- Department of Atomic Energy.
- Imprint Place
- Mumbai (India)
- Imprint Title
- Proceedings of the DAE solid state physics symposium. V. 39C
- Imprint Pagination
- 497 p.
- Journal Page Range
- p. 39.
Conference
- Title
- 39. DAE solid state physics symposium.
- Dates
- 27-31 Dec 1996.
- Place
- Mumbai (India).
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 29011053
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL GROWTH; GOLD IONS; GOLD SILICIDES; HELIUM IONS; PELLETRON ACCELERATORS; SILICON; SURFACE AREA
- Descriptors DEC
- ACCELERATORS; CHARGED PARTICLES; ELECTROSTATIC ACCELERATORS; ELEMENTS; GOLD COMPOUNDS; IONS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 2 refs., 2 figs.