Electrochromic behavior of WO3 thin films prepared by GLAD
Creators
- 1. ShanghaiTech University, Shanghai 201210 (China)
- 2. University of Chinese Academy of Sciences, Beijing 100049, PR (China)
- 3. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR (China)
Description
Highlights: • Amorphous WO3 thin films deposited by the GLAD technique were found to crystallize at around 300 °C. • The structure, morphology, and electrochromic properties of annealed WO3 were characterized. • The amorphous GLAD WO3 films exhibited a high coloration efficiency and stable reversibility. • The transmittance modulation contrast of GLAD WO3 films under the ± 45° incidence can be up to 11%. • WO3 films with the birefringence character exhibited the tunable angular selectivity. WO3 thin films fabricated by glancing angle deposition (GLAD) are proposed as excellent electrochromic coatings with favorable ion diffusion. A ∼ 500-nm film prepared by GLAD had a relatively large transmittance modulation. The crystallization structure, surface morphology, chemical state, optical and electrochromic properties of WO3 thin films were systematically characterized upon annealing treatment. Compared with annealed WO3 porous nanostructured films, the amorphous as-deposited films exhibited a high coloration efficiency and stable reversibility. Furthermore, the GLAD WO3 films exhibit the tunable angular selectivity under illumination with p-polarized light because of the birefringence, which could extend the application range of nanostructured films in the electrochromic field.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2018.03.248Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2018.03.248;
- PII
- S0169433218309450;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 447
- Journal Page Range
- p. 471-478
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52110560
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANNEALING; BIREFRINGENCE; COLORATION; COMPARATIVE EVALUATIONS; CRYSTALLIZATION; DIFFUSION; ELECTROCHROMISM; NANOSTRUCTURES; POROUS MATERIALS; THIN FILMS; TUNGSTEN OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRO-OPTICAL EFFECTS; EVALUATION; FILMS; HEAT TREATMENTS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; REFRACTION; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.