Effect of subthreshold-energy electrons on defect formation in germanium near-to-surface region

A study was made on the effect of 7-50 keV electrons on the density of germanium surface electron states and recombination rate of nonequilibrium charge carriers in near-to-surface region.It was shown that defects, occured under irradiation, were localized in near-to-surface semiconductor layer with thickness on the order of or less than 0.1μm. The rate of defect formation in this layer under the efect of low-energy electrons (0.5 - 5 cm-1) was evaluated. Factors, promoting to the efficiency of defect formation in near-to-surface semiconductor region being by several orders higher, as compared to the volume, were noted. Possible mechanisms of defect formation were discussed