Published November 30, 2006
| Version v1
Journal article
Irradiation effects on thin epitaxial silicon detectors
Creators
- 1. Dipartimento di Fisica, Universita di Padova and INFN Sezione di Padova, Via Marzolo 8, I-35131, Padova (Italy)
- 2. Dipartimento di Energetica, Universita di Firenze and INFN Sezione di Firenze, Via S. Marta 3, I-50139, Florence (Italy)
- 3. ITC-irst, Microsystems Division, Via Sommarive 18, I-38050, Povo (Trento) (Italy)
- 4. CERN, Geneva 23, CH-1211 (Switzerland)
Description
Radiation hardness of silicon detectors based on thin epitaxial layer on Czochralski (CZ) substrate for the LHC upgrade (Super-LHC) was studied. No type inversion was observed after irradiation by 24 GeV/c protons up to the fluence of 1016 p/cm2 due to overcompensating donor generation. After long-term annealing (corresponding to 500 days at room temperature) proton irradiated devices show a decrease of the effective doping concentration and then undergo type inversion. Measurements confirm that thin epitaxial devices on CZ substrate could be used for innermost layers of vertex detectors in future experiments at the Super-LHC
Additional details
Identifiers
- DOI
- 10.1016/j.nima.2006.05.202;
- PII
- S0168-9002(06)01087-4;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 568
- Journal Issue
- 1
- Journal Page Range
- p. 61-65
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 10. European symposium on semiconductor detectors
- Dates
- 12-16 Jun 2005
- Place
- Wildbad Kreuth (Germany)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38037251
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CERN LHC; DAMAGE; EPITAXY; EQUIPMENT; GEV RANGE; IRRADIATION; LAYERS; PROTONS; SI SEMICONDUCTOR DETECTORS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ACCELERATORS; BARYONS; CRYSTAL GROWTH METHODS; CYCLIC ACCELERATORS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; MEASURING INSTRUMENTS; NUCLEONS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; STORAGE RINGS; SYNCHROTRONS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.