Published September 1989
| Version v1
Journal article
Irradiation temperature effect on compensation of n-GaAs conductivity by radiation defects
- 1. Leningradskij Politekhnicheskij Inst., Leningrad (USSR)
Description
The effect of radiation defect formation at elevated irradiation temperatures on compensation of n-GaAs conductivity is studied. It is found that the increase of irradiation temperatures in case of identical radiation effects sharply reduces the rate of removal of charge carriers. The experiments were carried out at 285-520K temperatures using electron (Ee = 1 MeV), proton (Ep = 150 keV) and gamma radiation (Eγ = 1.25 MeV)
Additional details
Additional titles
- Original title (Russian)
- Vliyanie temperatury oblucheniya na kompensatsiyu provodimosti n-GaAs radiatsionnymi defektami
Publishing Information
- Journal Title
- Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
- Journal Volume
- 32
- Journal Issue
- 9
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 110-112
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 22020469
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CARRIER DENSITY; CHARGE CARRIERS; ELECTRON BEAMS; FRENKEL DEFECTS; GALLIUM ARSENIDES; GAMMA RADIATION; HIGH TEMPERATURE; KEV RANGE 100-1000; MEDIUM TEMPERATURE; MONOCRYSTALS; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION DOSES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONIZING RADIATIONS; KEV RANGE; LEPTON BEAMS; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; VACANCIES