Ion-beam induced epitaxy of silicon

Epitaxial regrowth of an amorphous Si layer on a <100> Si crystal held at 200-4000C is achieved under bombardment with Si, Kr, or Xe ions. Channeling measurements with MeV He ions show the regrowth proceeds from the amorphous crystalline interface, and has an initially linear dose dependence. The annealing beam, however, introduced additional damage centered at or beyond the ion range. Amorphous layers obtained by low-temperature self-ion bombardment regrow much more readily than amorphous deposited layers. (Auth.)