Luminescence analysis of dependence of composition of CdS polycrystal films on their synthesis conditions

The effect of thermodynamic conditions of synthesis and the type of substrate (conducting, dielectrical) on the content of self-defects in polycrystal films of cadmiun sulfide is studied. The nature of the main donor defects in cadmiun sulfide films is discussed. By the exciton luminescence spectra it is established that with an increase of evaporation temperature from 823 to 883 K and of the substrate temperature from 753 to 813 K in polycrystal films of CdS the concentration of sulfur vacancies grows while the concentration of interstitial cadmium decreases; the concentration of these defects does not depend on the type of a substrate. The concentration of interstitial sulfur is lower in films grown on a conducting substrate