Published June 24, 2015
| Version v1
Journal article
Pseudogap behaviour in FeTe and FeSe probed by photoemission
- 1. Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India)
- 2. Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)
- 3. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi-110012 (India)
Description
This study reports the valence band photoelectron spectroscopic studies of FeTe and FeSe. A doping induced and temperature dependent pseudogap occur near the Fermi level. The spectral weight transfer occurs due to the change in chalcogen height due to lowering of temperature. This result is in analogy with the reduction in chalcogen height due to the replacement of Te by Se
Additional details
Identifiers
- DOI
- 10.1063/1.4918163;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1665
- Journal Issue
- 1
- Journal Page Range
- vp.
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 59. DAE solid state physics symposium 2014
- Dates
- 16-20 Dec 2014
- Place
- Tamilnadu (India)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47060632
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ENERGY GAP; FERMI LEVEL; IRON SELENIDES; IRON TELLURIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PROBES; TEMPERATURE DEPENDENCE; VALENCE
- Descriptors DEC
- CHALCOGENIDES; ELECTRON SPECTROSCOPY; EMISSION; ENERGY LEVELS; IRON COMPOUNDS; SECONDARY EMISSION; SELENIDES; SELENIUM COMPOUNDS; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC