Published June 24, 2015 | Version v1
Journal article

Pseudogap behaviour in FeTe and FeSe probed by photoemission

  • 1. Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India)
  • 2. Department of Physics, Jamia Millia Islamia, New Delhi-110025 (India)
  • 3. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi-110012 (India)

Description

This study reports the valence band photoelectron spectroscopic studies of FeTe and FeSe. A doping induced and temperature dependent pseudogap occur near the Fermi level. The spectral weight transfer occurs due to the change in chalcogen height due to lowering of temperature. This result is in analogy with the reduction in chalcogen height due to the replacement of Te by Se

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1665
Journal Issue
1
Journal Page Range
vp.
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
59. DAE solid state physics symposium 2014
Dates
16-20 Dec 2014
Place
Tamilnadu (India)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47060632
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ENERGY GAP; FERMI LEVEL; IRON SELENIDES; IRON TELLURIDES; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; PROBES; TEMPERATURE DEPENDENCE; VALENCE
Descriptors DEC
CHALCOGENIDES; ELECTRON SPECTROSCOPY; EMISSION; ENERGY LEVELS; IRON COMPOUNDS; SECONDARY EMISSION; SELENIDES; SELENIUM COMPOUNDS; SPECTROSCOPY; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
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