Published September 1976
| Version v1
Journal article
Formation of dislocation networks on annealing of boron-implanted silicon layers
- 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Obrazovanie dislokatsionnykh setok pri otzhige implantirovannykh borom sloev kremniya
Publishing Information
- Journal Title
- Fiz. Tverd. Tela
- Journal Volume
- 18
- Journal Issue
- 9
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 2803-2805
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 8344823
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; BORON IONS; BURGERS VECTOR; DISLOCATIONS; ION IMPLANTATION; KEV RANGE 10-100; LAYERS; RADIATION DOSES; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; LINE DEFECTS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Solid State.