Mechanism of photoconduction of CdCr2Se4 magnetic semiconductor crystals

Calculations of temperature dependences of CdCr2Se4 magnetic semiconductor crystal photoconductivity are presented; the calculations were performed on the basis of the rthree-center model of a compensated semiconductor taking into account the dependence of the occurrence depth of one of the centers located in the upper part of the forbidden zone on materials magnetic ordering level. The model discribes well the basic peculiarities of the experimental dependences of CdCr2Se4 crystal photoconductivity