Published 1999
| Version v1
Miscellaneous
Low temperature magneto-resistance in multi-layered Ge/Nb films
Description
We report on superconducting fluctuations behavior based on weak localization effects in amorphous Ge/Nb multi-layer films in order to investigate a transport crossover from 2D to 3D due to a coupling effect between superconducting layers. The microscopic parameters originated to electron interference have been determined by a numerical fitting to quantum correction of the magneto-resistance theories for the layered film. (author)
Additional details
Publishing Information
- Imprint Title
- Proceedings of the 4th international symposium on advanced physical fields. Quantum phenomena in advanced materials at high magnetic fields
- Imprint Pagination
- 344 p.
- Journal Page Range
- p. 139-142
Conference
- Title
- 4. international symposium on advanced physical fields
- Acronym
- APF-4
- Dates
- 9-12 Mar 1999
- Place
- Tsukuba, Ibaraki (Japan)
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 32007504
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- AMORPHOUS STATE; ELECTRONIC STRUCTURE; GERMANIUM; INELASTIC SCATTERING; MAGNETIC FIELDS; MAGNETORESISTANCE; NIOBIUM; SUPERCONDUCTIVITY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; THIN FILMS
- Descriptors DEC
- ALLOYS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; METALS; PHYSICAL PROPERTIES; REFRACTORY METALS; SCATTERING; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Notes
- 14 refs., 3 figs.