Published 2019
| Version v1
Book
Anomalies in the relaxation volume of impurity defects in silicon: ab initio calculations for Al and Ga
Creators
- 1. Inst. Kristallografii im. A.V. Shubnikova FNITs «Kristallografiya i Fotonika» RAN, Moscow (Russian Federation)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Аномалии релаксационного обьема примесных дефектов в кремнии: расчеты из первых принципов для Ал и Га
Publishing Information
- Publisher
- Izd-vo MISiS
- Imprint Place
- Moscow (Russian Federation)
- ISBN
- 978-5-907226-33-3
- Imprint Title
- Eighth International Conference #Left-Pointing Double Angle Quotation Mark#Crystal physics and deformation behavior of advanced materials#Right-Pointing Double Angle Quotation Mark# dedicated to the 150th anniversary of D.I. Mendeleev#Right Single Quotation Mark#s discovery of the Periodic Law of Chemical Elements. Third International School of young scientists #Left-Pointing Double Angle Quotation Mark#Actual problems of modern materials science#Right-Pointing Double Angle Quotation Mark#. Abstracts of reports
- Imprint Pagination
- 238 p.
- Journal Page Range
- p. 53
Conference
- Title
- 8. International Conference 'Crystal physics and deformation behavior of advanced materials' dedicated to the 150th anniversary of D.I. Mendeleev's discovery of the Periodic Law of Chemical Elements; 3. International School of young scientists 'Actual problems of modern materials science'
- Original Conference Title
- Vos'maya Mezhdunarodnaya konferentsiya «Kristallofizika i deformatsionnoe povedenie perspektivnykh materialov», posvyashchennaya 150-letiyu otkrytiya D.I. Mendeleevym Periodicheskogo zakona khimicheskikh ehlementov. Tret'ya Mezhdunarodnaya shkola molodykh uchenykh «Aktual'nye problemy sovremennogo materialovedeniya»
- Dates
- 5-8 Nov 2019
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 52105754
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ALUMINIUM; CRYSTAL DEFECTS; DENSITY FUNCTIONAL METHOD; GALLIUM; IMPURITIES; RELAXATION; SILICON
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL STRUCTURE; ELEMENTS; METALS; SEMIMETALS; VARIATIONAL METHODS
Optional Information
- Notes
- 1 ref., 1 fig. Imprint:Vos'maya Mezhdunarodnaya konferentsiya #Left-Pointing Double Angle Quotation Mark#Kristallofizika i deformatsionnoe povedenie perspektivnykh materialov#Right-Pointing Double Angle Quotation Mark#, posvyashchennaya 150-letiyu otkrytiya D.I. Mendeleevym Periodicheskogo zakona khimicheskikh ehlementov. Tret'ya Mezhdunarodnaya shkola molodykh uchenykh #Left-Pointing Double Angle Quotation Mark#Aktual'nye problemy sovremennogo materialovedeniya#Right-Pointing Double Angle Quotation Mark#. Tezisy dokladov