Published 1998 | Version v1
Miscellaneous Metadata-only

Schottky diodes on MOCVD grown AlGaN films

Creators

  • 1. Institute of Rare Metals, Moscow (Russian Federation)
  • 2. Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsgurgh (United States)
  • 3. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsgurgh (United States)
  • 4. Advanced Technology Materials Inc., (United States)

Description

no abstract available

Part of:
Abstracts of The Third European GaN Workshop EGW-3

Additional details

Publishing Information

Imprint Title
Abstracts of The Third European GaN Workshop EGW-3
Imprint Pagination
97 p.
Journal Page Range
p. 66

Conference

Title
3. European GaN Workshop EGW-3
Dates
22-24 Jun 1998
Place
Warsaw (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
31064576
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; MEETINGS; NITRIDES; ORGANOMETALLIC COMPOUNDS; SCHOTTKY BARRIER DIODES; SPUTTERING; THIN FILMS; TRAPPED ELECTRONS
Descriptors DEC
CHEMICAL COATING; DEPOSITION; ELECTRONS; ELEMENTARY PARTICLES; FERMIONS; FILMS; LEPTONS; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SURFACE COATING

Optional Information