Published July 1, 1989
| Version v1
Journal article
Characterization of thin AlGaAs/InGaAs/GaAs quantum-well structures bonded directly to SiO2/Si and glass substrates
Creators
- 1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)
Description
Strained GaAs/InGaAs/AlGaAs quantum-well structures grown on GaAs have been removed from their original substrates by a lift-off process and bonded directly to glass or SiO2-coated Si substrates. Both undoped and modulation-doped structures have been characterized before and after transfer by Hall measurements, variable temperature x-ray diffraction, and photoluminescence. The bonded structures retain the high quality of the as-grown layers
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 66
- Journal Issue
- 1
- Series
- J. Appl. Phys.
- Journal Page Range
- 459-462
- ISSN
- 0021-8979
- CODEN
- JAPIA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20084089
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; ELECTRICAL PROPERTIES; EPITAXY; GALLIUM ARSENIDES; GLASS; HALL EFFECT; INDIUM ARSENIDES; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SILICON; SILICON OXIDES; STRAINS; SUBSTRATES; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; SILICON COMPOUNDS