Published 1979
| Version v1
Miscellaneous
Simulation of semiconductor radiation damages by medium-energy ions considering effect of irradiation dose and intensity
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Моделирование радиационных повреждений полупроводников ионами средних энергий с учетом влияния дозы и интенсивности облучения
Publishing Information
- Imprint Title
- Preliminary program and summaries of reports of the 10. Conference on problems of charged particle beams using for studying substance composition and properties
- Journal Page Range
- p. 92-93.
- Report number
- INIS-mf--5499
Conference
- Title
- 10. Conference on problem of charged particle beams using for studying substance composition and properties.
- Dates
- 28 - 30 May 1979.
- Place
- Moscow, USSR.
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 11509556
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ATOM-ATOM COLLISIONS; ATOMIC NUMBER; ENERGY DEPENDENCE; GERMANIUM; ION CHANNELING; IONS; KEV RANGE 01-10; KEV RANGE 10-100; MONOCRYSTALS; ORIENTATION; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RADIATION DOSES; SILICON; SIMULATION; SPATIAL DISTRIBUTION
- Descriptors DEC
- ATOM COLLISIONS; CHANNELING; CHARGED PARTICLES; COLLISIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; KEV RANGE; METALS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Short note; 1 ref. Imprint:Predvaritel'naya programma i tezisy dokladov 10. Soveshchaniya po problemam primeneniya puchkov zaryazhennykh chastits dlya izucheniya sostava i svojstv veshchestva.