Near surface modification of sapphire by ion implantation

The ion implantation into sapphire single crystals and the variation of chemical and mechanical properties are described. The temperature rise of sapphires due to the ion implantation is an important problem. The temperature is measured by the measurement of the variation of wave-length of emitting spectra. The lattice defect caused by the ion irradiation varies the mechenical properties of sapphires. The catalytic action of the implanted material depends on the condition of heat treatment. The structure near surface was analyzed by the Rutherford scattering or channeling phenomena. The mechanical properties near the surface of sapphires can be controlled by selecting the kinds of ions to be implanted and the energy of implantation. The relative hardness and heat recovery behavior were studied. (Kato, T.)