Published December 1, 2019 | Version v1
Journal article

Ion-induced Auger electrons contrast on cross-beam systems

  • 1. Dukhov Research Institute of Automatics, Moscow (Russian Federation)
  • 2. Moscow Institute of Physics and Technology (State University), Dolgoprudny (Russian Federation)

Description

The article deals with the basic aspects of ion-stimulated Auger process. The authors suggested using the standard Everhart–Thornley detector to obtain a contrast of ion-induced Auger electrons on cross-beam systems using mathematical processing of the image which is based on spectroscopic information. As a result, this work consisted of obtaining images that showed the contrast distribution of Auger electrons and the sputtering yield on aluminum thin films samples. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/ab541f

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
34
Journal Issue
12
Journal Page Range
[4 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52037548
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ALUMINIUM; AUGER EFFECT; ELECTRONS; IONS; SPUTTERING; THIN FILMS
Descriptors DEC
CHARGED PARTICLES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FILMS; LEPTONS; METALS