Published December 1, 2019
| Version v1
Journal article
Ion-induced Auger electrons contrast on cross-beam systems
Creators
- 1. Dukhov Research Institute of Automatics, Moscow (Russian Federation)
- 2. Moscow Institute of Physics and Technology (State University), Dolgoprudny (Russian Federation)
Description
The article deals with the basic aspects of ion-stimulated Auger process. The authors suggested using the standard Everhart–Thornley detector to obtain a contrast of ion-induced Auger electrons on cross-beam systems using mathematical processing of the image which is based on spectroscopic information. As a result, this work consisted of obtaining images that showed the contrast distribution of Auger electrons and the sputtering yield on aluminum thin films samples. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6641/ab541fAdditional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 34
- Journal Issue
- 12
- Journal Page Range
- [4 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52037548
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM; AUGER EFFECT; ELECTRONS; IONS; SPUTTERING; THIN FILMS
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FILMS; LEPTONS; METALS