Published May 1983 | Version v1
Journal article Metadata-only

Niobium thin-film point-contact Josephson junction

Creators

  • 1. Yokogawa Electric Works, Musashino-shi, Tokyo 180, Japan

Description

A stable, niobium thin-film point-contact Josephson junction can be fabricated using rf magnetron sputtering and electron beam lithography. Constant-voltage steps based on a ac Josephson effect are observed up to a voltage level of 4 mV at 4.2 K when a 9-GHz microwave signal is applied. This voltage level is the highest for any thin-film weak link except for the tunnel junction

Additional details

Publishing Information

Journal Title
J. Appl. Phys.
Journal Volume
54
Journal Issue
5
Series
J. Appl. Phys.
Journal Page Range
2866-2868
ISSN
0021-8979

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14783751
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALTERNATING CURRENT; ELECTRIC CONTACTS; ELECTRON BEAMS; FABRICATION; FILMS; GHZ RANGE; JOSEPHSON EFFECT; JOSEPHSON JUNCTIONS; MAGNETRONS; MICROWAVE RADIATION; NIOBIUM; RF SYSTEMS; SPUTTERING; STABILITY; THICKNESS; ULTRALOW TEMPERATURE
Descriptors DEC
BEAMS; CURRENTS; DIMENSIONS; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FREQUENCY RANGE; LEPTON BEAMS; METALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; PARTICLE BEAMS; RADIATIONS; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS