Acceptor energy and characteristic properties of Mott transition in p-type InSb under uniaxial deformation

Specific resistance and Hall effect in p-InSb at acceptor concentration of 1014-2x1016 cm-3 under uniaxial pressure up to 5 kbar in the 1.7-77 K temperature range are investigated. Uniaxial compression is shown to result in decrease of acceptor ionization energy and for materials with NA-ND>1015 cm-3 - in Mott transition. In this case the energy of the acceptor ground state turns to zero, but some carriers remain localozed. These carriers are supposed to be localized on other states of the same acceptor