Published July 1995
| Version v1
Journal article
Resonant Raman-scattering in 3 - 5- and 2 - 6 -semiconductors and heterostructures
Description
The physics and technology of heterostructures of 3 - 5-and of 2 -6-materials are rapidly growing films with promising developments in the future. After compiling some basic relations of the microscopic theory of Raman scattering for the off-resonance and in-resonance case, we start with a report on collective intersubband excitations in p-doped GaAs/(Al, Ga)As multiple quantum wells and on the effects of subband nonparabolicity in these samples. Next we concentrate on a detailed investigation of the electronic spin flip in semimagnetic (cd, Mn)Te and on the optically detected paramagnetic resonance signal (PRS) from the localized 3d5-electrons of Mn2+ in the same material
Additional details
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (1996)
- Journal Volume
- 40
- Journal Issue
- 7
- Journal Page Range
- p. 666-680.
- ISSN
- 1027-4340
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 28000446
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CADMIUM TELLURIDES; ELECTRON-PHONON COUPLING; GALLIUM ARSENIDES; LIGHT SCATTERING; MANGANESE TELLURIDES; OPTICAL PROPERTIES; P-TYPE CONDUCTORS; RAMAN SPECTRA; REVIEWS; SEMICONDUCTOR MATERIALS; SPIN FLIP; VISIBLE RADIATION; ZINC TELLURIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; COUPLING; DOCUMENT TYPES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; MANGANESE COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SCATTERING; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS