Published July 1995 | Version v1
Journal article

Resonant Raman-scattering in 3 - 5- and 2 - 6 -semiconductors and heterostructures

Creators

  • 1. Wuerzburg Univ. (Germany). Physikalisches Inst.

Description

The physics and technology of heterostructures of 3 - 5-and of 2 -6-materials are rapidly growing films with promising developments in the future. After compiling some basic relations of the microscopic theory of Raman scattering for the off-resonance and in-resonance case, we start with a report on collective intersubband excitations in p-doped GaAs/(Al, Ga)As multiple quantum wells and on the effects of subband nonparabolicity in these samples. Next we concentrate on a detailed investigation of the electronic spin flip in semimagnetic (cd, Mn)Te and on the optically detected paramagnetic resonance signal (PRS) from the localized 3d5-electrons of Mn2+ in the same material

Additional details

Publishing Information

Journal Title
Ukrayins'kij Fyizichnij Zhurnal (1996)
Journal Volume
40
Journal Issue
7
Journal Page Range
p. 666-680.
ISSN
1027-4340