Published May 7, 2015
| Version v1
Journal article
Effect of Ru thickness on spin pumping in Ru/Py bilayer
- 1. Department of Physics, Thin Film Laboratory, Indian Institute of Technology Delhi, New Delhi 110016 (India)
Description
We report the effect of Ru thickness (tRu) on ferromagnetic resonance (FMR) line-width of Ru(tRu)/Py(23 nm) bilayer samples grown on Si(100)/SiO2 substrates at room temperature by magnetron sputtering. The FMR line-width is found to vary linearly with frequency for all thicknesses of Ru, indicating intrinsic origin of damping. For Ru thicknesses below 15 nm, Gilbert-damping parameter, α is almost constant. We ascribe this behavior to spin back flow that is operative for Ru thicknesses lower than the spin diffusion length in Ru, λsd. For thicknesses >15 nm (>λsd), the damping constant increases with Ru thickness, indicating spin pumping from Py into Ru
Additional details
Identifiers
- DOI
- 10.1063/1.4913510;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 117
- Journal Issue
- 17
- Journal Page Range
- vp.
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46115783
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIFFUSION LENGTH; FERROMAGNETIC RESONANCE; INTERFACES; LAYERS; LINE WIDTHS; RUTHENIUM; SILICA; SILICON; SILICON OXIDES; SPIN; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THICKNESS; THIN FILMS
- Descriptors DEC
- ANGULAR MOMENTUM; CHALCOGENIDES; DIMENSIONS; ELEMENTS; FILMS; LENGTH; MAGNETIC RESONANCE; METALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PLATINUM METALS; REFRACTORY METALS; RESONANCE; SEMIMETALS; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC